HIP Sintering of Silicon Carbide without Additives

Low Temperature Sintering Additives for Silicon Nitride

This work deals with sintering additives for the low temperature pressureless sintering of Si3N4, via a transient liquid technique. Much attention has been given to the development of a sintering process using low-cost Si3N4 powder (Silzot HQ, Germany) as the starting material and employing sintering additives which are also both economically attractive and enable sintering at low temperatures....

Flash (Ultra-Rapid) Spark-Plasma Sintering of Silicon Carbide

A new ultra-rapid process of flash spark plasma sintering is developed. The idea of flash spark plasma sintering (or flash hot pressing - FHP) stems from the conducted theoretical analysis of the role of thermal runaway phenomena for material processing by flash sintering. The major purpose of the present study is to theoretically analyze the thermal runaway nature of flash sintering and to exp...

Effect of Silicon Carbide and graphite additives on the pressureless Sintering mechanism and microstructural characteristics of Ultra-High Temperature ZrB2 Ceramics Composites

The effect of SiC content, additives, and process parameters on densification and microstructural properties of pressureless sintered ZrB2– (1–10 wt %) SiC particulate composites have been studied. The ZrB2–SiC composite powders mixed by Spex mixer with 1-2wt% C (added as graphite powder) and CMC have been cold-compacted and sintered in argon environment in the temperature range of 1800–2100ºC ...

Silicon Nitride and Silicon Carbide

Boron carbide/n-silicon carbide heterojunction diodes